Skip to content
Open access

Reliability challenges for resistive random-access memory-based parallel logic computing

Aug 2026 · npj Unconventional Computing · Vol 3 · 0 citations · 56 references

TL;DR

This work demonstrates the parallel and cascading execution of logic functions in an RRAM-based CIM array and provides new insights into the reliability and logic correctness of resistive CIM and outlines a potential path towards scalable and energy-efficient computing architectures.

Abstract

Conventional computing architectures are reaching their scalability limits, while their energy demands increase rapidly. A bottleneck is the separation of memory and processing units, which requires a continuous data transfer. This memory wall increases the power consumption and limits the processing speed at the same time. Computing-in-Memory (CIM) has emerged as an alternative computing paradigm, where the data is processed directly within the memory array, thereby reducing data transfer costs. Emerging non-volatile devices such as magnetic-tunnel junctions (MTJ), phase-change memory (PCM), or resistive random-access memory (RRAM) are promising candidates for CIM. As re-programmable and highly scalable devices, they combine both computing and memory functionalities. While the feasibility of RRAM-based CIM has been proven, both in simulation and in experimental demonstrations, the operational reliability is still an ongoing issue. In this work, we demonstrate the parallel and cascading execution of logic functions in an RRAM-based CIM array. The experimental results are complemented by an in-depth simulation study to investigate the logic accuracy and optimization strategies. These results provide new insights into the reliability and logic correctness of resistive CIM and outline a potential path towards scalable and energy-efficient computing architectures.

Read PDF

Similar papers

Review Open access Sep 2026

Nonlinear selectorless memory technologies for high-density storage and beyond-von-Neumann computing: a review

With the rapid advancement of artificial intelligence (AI), there is an urgent demand for emerging technologies that can deliver low-power storage alongside high-performance computing. Traditional volatile memories—such as static random access memory and dynamic random access memory—which are closely integrated with th...

Daphne Chen, M. Kozicki, Tuo-Hung Hou · 0 citations
Preprint Sep 2026

FALCON: Fault-Tolerant Magnetic Tunnel Junction-Based In-Memory Stochastic Architecture for Reliability-Critical Edge AI Applications

This work proposes FALCON, a fault-tolerant, MTJ-based in-memory arithmetic architecture integrated with Stochastic Computing (SC), and investigates the proper functionality of FALCON on morphological closing as a realistic noise-tolerant image processing case study.

Farzad Razi, M. Moghadam, Sercan Aygün et al. · 0 citations
#edge computing Open access Oct 2026

Design, Stability Improvement, and Scaling of a 4-Transistor Static Latch for Digital Compute-in-Memory

This work presents a novel standard cell-compliant static latch that can be placed alongside digital logic and investigates the use of backgate biasing to improve system stability, and draws a comparison between the 22 nm implementations from the original work and the 12 nm implementation, indicating that moving to fin...

Florian Freye, Christian Lanius, Nils Mutert et al. · 0 citations
Aug 2026

A Reconfigurable 11T SRAM Compute-in-Memory Architecture for Dual-Mode MAC Operations

Current trends in hardware design for artificial intelligence and machine learning algorithms impose limits on traditional Von Neumann architectures due to the memory wall problem. Hence, researchers are focusing on versatile memory design and in-memory computing (IMC) architectures. The standard 6T SRAM cell is small...

Umang Mahendrabhai Joshi, Priyankkumar H. Prajapati, Pinalkumar J. Engineer et al. · 0 citations
Open access Aug 2026

Robust Hybrid Computing-in-Memory System Based on 2T-2C and 4T-2C FRAM Cells

This paper proposes a computing-in-memory (CiM) architecture based on a hybrid 2T-2C/4T-2C ferroelectric random-access memory (FRAM) array that provides ADC-free bitwise computing with binary inputs and outputs, reducing peripheral-circuit overhead and power consumption.

Chen He, Jianjun Li, Wei Li et al. · 0 citations

We use cookies to run the site and, with your consent, for analytics and to show ads. See our Cookie Policy.