TiSi2 Phase Formation in Magnetron-Sputtered Ti Films on Silicon During Rapid Thermal Annealing

Abstract

Titanium thin films were deposited on crystalline silicon substrates by DC magnetron sputtering and annealed by rapid thermal processing under vacuum and nitrogen environments. X-ray diffraction, atomic force microscopy, and four-point probe measurements were used to evaluate phase formation and electrical properties. Annealing at 600 °C for 5 min in 10−3 Pa high vacuum produces the C54-TiSi2 phase, reducing sheet resistance from 56 Ω/sq to 1.94 Ω/sq. Lowering the synthesis temperature from 923 K to 873 K decreases radiative energy consumption by approximately 20%. In contrast, annealing in N2 atmosphere yields Ti5Si4 and TiN instead of TiSi2. A combined thermodynamic and diffusion model explains the observed phase selectivity under vacuum and nitrogen environments.