Thickness Engineering in HfO2-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs
HfO2-based ferroelectrics have extended a familiar CMOS high-κ dielectric into a materials platform for nonvolatile memory, low-power logic, and in-memory hardware. This review examines thickness engineering in hafnia, especially Hf0.5Zr0.5O2 (HZO), through the state produced during fabrication, the voltage and time av...