Vijay Kumar Sharma

Stability and Leakage Optimization for an SRAM Cell Using FinFET Technology

The aggressive scaling of complementary metal-oxide-semiconductor (CMOS) into the deep nanometre regime has increased leakage power and reduced stability in conventional static random-access memory (SRAM) cells, posing issues for ultra-low-power applications. This study offers a fin-field effect transistor (FinFET)...