Jun-Zhe Chen

URDT16T: An Ultrafast Read and Double Node Upset Tolerant SRAM for Space Applications

As CMOS technology continuously advances and integration density steadily increases, the susceptibility of Static random-access memory (SRAM) cells to charge-sharing-induced Double-Node Upsets (DNUs) triggered by aerospace particles is significantly exacerbated. To address the formidable challenge of balancing radiatio...