We demonstrate high-precision hyperdimensional computing using an in-memory computing (IMC) architecture based on ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors. By exploiting the high polarization charge density of CMOS back-end-compatible HZO, we achieved 32 well-separated and linearly programmable intermediate states i...
Ella Paasio, Simon Thomann, Anika Anu et al.· Microsystems & Nanoengineeri...· 0 citations
Owing to increased power density with each newer technology node, transistors suffer from increased Self-Heating (SH) at room temperature, which is a daunting challenge for circuits and processors’ reliability. Given the increasing interest in leveraging cryogenic temperatures to enhance the performance and energy effi...
S. S. Parihar, F. Klemme, Anirban Kar et al.· IEEE transactions on compute...· 1 citation
Subthreshold-FeFET based temperature-resilient 2T-1FeFET and 2FeFET-1T CiM cell designs that address the temperature vulnerability are presented and GTRCiM, a novel generic temperature-resilient CiM design that accommodates both proposed CiM cells and other typical FeFET based cells while maintaining ultra-low-power co...
Yifei Zhou, Zeyu Yang, Meimei Ma et al.· ACM Transactions on Design A...· 0 citations
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