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Byeong-Gwon Kim

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Open access 2026

Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile 1-bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference

The spin-transfer-torque magnetic random access memory (STT-MRAM) is attractive for nonvolatile 1-bit sign-weight storage, but a favorable cell or local-read metric does not establish subsystem efficiency. We analyze a hybrid magnetic tunnel junction (MTJ)–complementary metal–oxide–semiconductor (CMOS) memory subsystem...

Byeong-Gwon Kim, Byeong-Kwon Ju, Ki-Young Lee · 0 citations

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