Preparation and characterization of semiconducting tellurium nanowires

Abstract

Low-dimensional semiconducting materials, particularly those derived from layered crystalline systems, have attracted extensive research interest due to their unique properties. Tellurium (Te), in particular, features a narrow bandgap, high carrier mobility, and pronounced anisotropy, demonstrating significant potential in infrared detectors, field-effect transistors (FETs), and piezoelectric devices. Consequently, the preparation of high-quality Te single crystals is critical for advancing related device applications. In this study, vapor deposition in a dual-zone furnace was employed to systematically investigate the effects of temperature and growth time on the synthesis of Te nanowires. The results indicate that the source zone temperature significantly influences the Te vapor concentration, enabling the stable growth of Te nanowires on silicon substrates at 600 °C. Increasing the substrate zone temperature promotes atomic diffusion, facilitating the longitudinal extension of the nanowires. Additionally, prolonged growth time reveals a competition mechanism between nucleation and growth: while initially increasing structural dimensions, excessive time exacerbates high-temperature decomposition effects. Raman spectroscopy confirmed the formation of a pure Te phase via its three characteristic peaks. Atomic force microscopy (AFM) measurements revealed that the prepared Te nanowires exhibit smooth surfaces with thicknesses ranging from 200 to 570 nm. By optimizing the growth parameters, this work successfully synthesized high-quality Te nanowires, providing a solid material foundation for the development of high-performance tellurium-based devices.