Disorder can localize valence- and conduction-band states to different degrees, yet whether such localization contrast has observable consequences remains poorly understood. Here, we show that localization contrast strongly impacts competing carrier-recombination channels. We illustrate this behavior in random In$_x$Ga$_{1-x}$N alloys. Increasing the In content from $x=13.5\%$ to $x=22\%$ progressively localizes the valence-band maximum state while leaving the conduction-band minimum state comparatively delocalized. This contrasting localization decreases the interband optical momentum matrix element underlying radiative recombination. For Auger-Meitner recombination, however, localization alone does not determine the coupling; atomic-scale disorder also breaks primitive-cell translational symmetry and modifies the momentum-space and phase structure of the states. This generates additional low-$Q$ components and enhances the Auger coupling by more than five orders of magnitude relative to pristine GaN. Thus, we provide a microscopic explanation for the competing trends in radiative and Auger recombination. More broadly, our results establish localization contrast as a mechanism through which disorder can control optical and carrier-carrier interactions in semiconductors.
Orbital angular momentum (OAM) characterization is central to understanding quantum materials such as valley Hall and Rashba systems and, through its connection to Berry curvature, provides key insight into band topology. Conventional OAM detection via photoemission dichroism, however, is susceptible to interference ar...
Jonas Erhardt, Sven Schemmelmann, Fabian Schöttke et al.· 1 citation
The confluence of strong electronic correlations and Berry curvature-driven transport constitutes a largely underexplored frontier in quantum materials research, particularly in systems where electronic correlations arise from flat-band physics rather than conventional $f$-electron states. Here, we report an intrinsic...
Arnab Bhattacharya, Prashant Singh, Ajay Kumar et al.· 0 citations
Binding anyons to optically active excitons offers a route to manipulate fractional excitations and reveal the internal spatial structure of anyons. We establish the formation of anyon bound states between a mobile dipolar exciton and an $e/3$ quasihole in a twisted bilayer MoTe$_2$ fractional Chern insulator. Using ex...
Controlling the spatial localization of electronic states is a fundamental strategy for manipulating charge and energy at the nanoscale. In coupled nanostructures, however, the localization field depends strongly on coupling between confinement regions, complicating comparisons across geometries. Here, we show that gro...
R. Méndez-Camacho, M. López-López, E. Cruz-Hernández· Nanotechnology· 0 citations
High harmonic generation (HHG) has emerged as a powerful probe of ultrafast electron dynamics in solids. However, in strongly correlated materials, where electronic excitations arise from many-body interactions rather than single-particle band dispersion, the field remains in its infancy. Here, we report HHG up to the...
Ming-Yao Guo, R. Noguchi, Mohammad Hassan et al.· 0 citations
Understanding how superconductivity emerges from correlated electronic states is a central challenge in condensed matter physics. The quasi-one-dimensional spin-ladder compound \bfs\ serves as a unique platform to study this interplay, as it lacks the two-dimensional square lattice characteristic of most iron-based sup...
Y. Oubaid, N. Dhami, P. Fertey et al.· 0 citations
We use cookies to run the site and, with your consent, for analytics and to show ads.
See our Cookie Policy.
