Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors.
H. Yang
H. Kim
Ha-Neul Lee
Dae Hwan Kim
Sung-Jin Choi
D. M. Kim
Yoon Jung Lee
Minkyu Park
Sung-Yun Woo
Haesung Kim
Jong-Ho Bae
Medicine