Low Power Schmitt Trigger based Single-Bitline 15-T Radiation Hardened SRAM Cell with Improved Performance

Abstract

This work puts forward a single bitline Schmitt-Trigger based Radiation Hardened 15T SRAM cell that aids immunity against radiation disturbances. The proposed cell demonstrates recovery from simultaneous disturbances affecting the storage node pair, thereby providing resilience against SEUs and SEMNU. The proposed cell uses read decoupled structure and feedback cutting technique to improve read and write performance. Further, feedback charge boosting technique is employed which significantly improves the critical charge of the proposed cell by 2.56× than the considered cells. The cell shows a maximum improvement of $\mathbf{4. 6 5} \boldsymbol{\times} / \mathbf{1 5. 6 7} \boldsymbol{\times} / \mathbf{1. 8 7} \boldsymbol{\times}$ in read delay, leakage power consumption, write trip voltage and 4.89× in read and hold static noise margins than other considered cells. Additionally, the cell exhibits the maximum energy efficiency of 2.98× compared to the considered cells. The circuit is analyzed using 45 nm technology node and at 1.2 V supply voltage in Cadence Virtuoso.