Interfacial gating of nano-ampere resistive switching in Si/SiOx/ZnO heterostructures for energy-efficient electronics.

Aug 2026

Interfacial control for temperature-driven hysteresis crossover in MoS2 ionotronic field-effect transistors for memory application

Ionotronic two-dimensional (2D) field-effect transistors (FETs) have opened new pathways for modulating electronic transport by coupling of ionic and electronic degrees of freedom, giving rise to tunable hysteresis dynamics. However, achieving precise control over temperature-dependent hysteresis remains a task due to...

Smruti Ranjan Senapaty, A. Panigrahi, S. K. Mallik et al. · Journal of Applied Physics · 0 citations

Open access Aug 2026

Electrical transport and low-frequency noise in MoS2 field-effect transistors under controlled gas atmospheres

Two-dimensional semiconductors, and particularly MoS2, are promising active materials for room-temperature gas sensing devices because their channel conductance is strongly modulated by surface adsorption. Here we report a systematic study of the electrical transport properties of back-gated MoS2 field-effect transisto...

F. Giubileo, Carlo Barone, M. Passacantando et al. · Nano Express · 1 citation

Preprint Sep 2026

On the physical origins of switching diversity in Cu-embedded SiO$_x$ memristive devices

Resistive switching devices with sub-stoichiometric SiO$_x$ and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as capacitive or gradual (interface-type switching) and abrupt or resistive (filamentary-type switching), motivating an analysis of the microscop...

Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs et al. · 1 citation

Oct 2026

Scalable Independently Tunable MoS2 Memtransistor via Contact-Engineering for Cardiac Signal Processing

Reliable and scalable neuromorphic computing demands memristive devices with deterministic analog tunability. While vertical structures enable high integration density, planar architectures are essential for complementary metal-oxide-semiconductor (CMOS) compatible memtransistor platforms governed by lateral charge t...

D. Elamaran, Masahiro Sakai, Hui-Qin Liu et al. · ACS Nano · 0 citations

Open access Sep 2026

Interfacial Gap Switching in MXene Ti3C2Tx MoS2 Memristors.

Resistive-switching devices are essential building blocks for advanced multifunctional integrated circuits (ICs), with four major switching mechanisms (ion migration, phase change, magnetization orientation, and ferroelectric polarization) having been extensively studied, each facing inherent limitations for practical...

Xiangming Xu, S. Pazos, De-Kang Zhu et al. · Advances in Materials · 0 citations

Sep 2026

High-Mobility MoS2 Transistors Enabled by In2P3S9 Functional Dielectric Engineering and Interfacial Dipole Modulation

Interfacial disorder, threshold-voltage instability, and mobility degradation present critical roadblocks for two-dimensional (2D) electronics. Conventional deposited high-κ oxides often introduce damage and defect states, whereas standard van der Waals (vdW) dielectrics function primarily as passive encapsulation la...

Shuo Liu, Yong-Si Liu, Xin-Yun Zhou et al. · Nano letters (Print) · 0 citations