Monolayer lateral heterostructures (LHSs) composed of two-dimensional semiconducting ferroelectrics hold promise for non-volatile electronic and optoelectronic applications. Lattice misfit strain at these atomically sharp interfaces can significantly modulate in-plane polarization and related electronic properties, yet the direct characterization of the strain profile remains challenging. Here, we map the strain in SnTe-PbTe monolayer LHSs quantitatively via low-temperature scanning tunneling microscopy (STM). By combining moiré pattern simulation and geometric phase analysis, we achieve lattice parameter measurements with 0.02 Å precision—which substantially exceeds conventional STM resolution. Significant tensile strain is observed in SnTe regions, while PbTe sections exhibit much smaller strain. Density functional theory calculations attribute this asymmetric strain distribution to distinct atomic coordination in each monolayer semiconductor. These findings offer critical insights into strain engineering of ultrathin group-IV monochalcogenide heterostructures.
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus diel...
Abderrahim Lamrani Alaoui, Álvaro Moreno, Maximilian Heithoff et al.· ACS Photonics· 0 citations
Metal halide perovskite nanoplatelets combine quantum confinement with structural anisotropy, yet how thickness and processing govern their internal crystal lattice versus collective organization remains unresolved. In this study, we separate internal structure, superlattice organization, and film texture using 2-5 mon...
M. Aboulsaad, German Alvarez Carrero, T. Chonamada et al.· 0 citations
Relaxor ferroelectrics offer dynamic polar responses desirable for adaptive electronics, yet they are fundamentally constrained by a long-standing trade-off: compositions that deliver large electric-field induced strain typically suffer from pronounced hysteresis, while highly tunable ferroelectrics exhibit limited...
Hangfeng Zhang, T. Saunders, Hai-Xue Yan et al.· Nature Communications· 0 citations
Controlling the nanostructure and electronic properties of polar semiconductors could enable new applications in nanoelectronics. Here, we report the synthesis of one-dimensional BiTeI nanowires confined within single- and multiwalled carbon nanotubes using a sublimation-driven transport reaction. Aberration-corrected...
Alejandro Cuesta-Troyano, Stefania Sandoval, R. Rurali et al.· Nano letters (Print)· 0 citations
Sliding ferroelectricity has attracted significant research interest due to its ultralow switching barrier and its presence in diverse systems, such as van der Waals (vdW) layered materials. Its polarization is strongly dependent on the material type, layer number, and stacking sequence. In this work, we investigate 27...
Jia-Yi Wang, Yu-Fei Xie, Yue-Yue Lu et al.· Applied Physics Letters· 0 citations
The structural, electronic, and optical properties of monolayer CrS
2
under biaxial strain are systematically investigated using density functional theory. The material exhibits dynamic and mechanical stability with pronounced isotropy, sustaining ultimate tensile stress of 4.04 N/m at ~16% strain. Electronic analy...
Q. Tran, Do van Truong, Le Nhat Bang· International Journal of Com...· 0 citations
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