Aug 2026· Nano letters (Print)· Vol 26 32, pp.
10882-10890
· 0 citations· 42 references
Medicine
Abstract
As multiterminal electronic devices integrating the functionalities of MOSFETs and memristors, memtransistors are core hardware for constructing complex neuromorphic computing circuits in the post-Moore era. However, random and uncontrollable defects in 2D materials limit existing devices in terms of volatile memory characteristics, robustness and power consumption, hindering their practical application. Here a MoS2-xOδ memtransistor array with controllable vacancy defects achieved through oxygen doping is demonstrated. Under an electric field, the dynamic migration and distribution of vacancies enable precise modulation of the Schottky barrier height, resulting in stable volatile switching with a switching ratio exceeding 105, a device-level energy consumption of 0.55 fJ and switching speed of 4.9 μs. A physical reservoir computing system built on these devices achieves high-precision pattern recognition. The combination of device-level low energy consumption, high robustness and high-switching-ratio volatile memory behavior makes the MoS2-xOδ memtransistor a scalable solution for developing complex neuromorphic circuits.
Memristive devices have emerged as promising candidates for next-generation non-volatile memory and neuromorphic computing systems owing to their simple device architecture, low power consumption, and capability for analog conductance modulation. In this work, Fe2O3-incorporated TiO2 thin films were employed as the act...
D. Sahu· Journal of Low Power Electro...· 0 citations
Two-dimensional (2D) memristors are promising for low-power and high-speed neuromorphic hardware. However, their performance under circuit-level constraints remains limited because resistive switching relies on native defects, hindering precise control of filament formation. Here, we report 2D MoTe2 memristors that int...
Jihoon Yang, Sohui Yoon, Jae-Ho Im et al.· Small· 0 citations
An analog memristor with multilevel conductance states is essential for scalable neuromorphic computing, but achieving linear and symmetric SET/RESET switching characteristics for well-defined conductance states remains a major challenge. Here, we report an amorphous erbium oxide (Er2O3)-based memristor that addresse...
Mrinal Malhotra, M. S. Yadav, Brajesh Rawat et al.· ACS Applied Electronic Mater...· 0 citations
Solution-processed memristors offer a scalable, cost-effective pathway for next-generation computing. The Rb4Ag2BiBr9 (RABB) based resistive random-access memory exhibits stable non-volatile memristive behavior with low operating voltage (∼1.7 V), robust endurance over ∼900 cycles, and extended data retention up to ∼ 5...
Suvankar Poddar, Souvik Bhattacharjee, Pulok Das et al.· Small· 1 citation
ABSTRACT Optoelectronic synapses integrating optical sensing and memory functions are promising building blocks for neuromorphic visual systems. Here, an optoelectronic synaptic transistor based on a MoS2/h‐BN/Au heterostructure with Au as the floating gate is demonstrated. Benefiting from the high work function of the...
Shuo Lei, Shi-Chen Zhang, Zhi-Peng Zheng et al.· Advancement of science· 0 citations
Volatile memristors hold promise for time-domain electronic functionalities beyond static memory, but their practical adoption is impeded by leakage currents, insufficient rectification, and unstable transient behaviors. Here, we report a self-rectifying volatile memristor based on a Pt/Ga2O3/indium gallium zinc oxide...
