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Bare‐Die Antiferromagnetic Computing

Sep 2026 · Advanced Materials · 39 references
Magnetic properties of thin films

Abstract

Semiconductor electronic devices are increasingly constrained by fundamental quantum tunneling effects and charge-based mechanisms, which severely limit further miniaturization, write-speed scaling, and environmental robustness of silicon-based technologies. These limitations are particularly prohibitive for deep-space exploration, where extreme temperatures, ultra-strong magnetic fields, and intense radiation rapidly incapacitate conventional electronics without massive shielding. Here, we present an intrinsically resilient, strain-mediated antiferromagnetic MnIr/PMN-PT edge processor that operates reliably as a bare die under temperatures up to 500 K, magnetic fields of 55 T, and radiation doses of 1.5 Mrad. By exploiting an Input-Modulated In Situ Self-Refreshing Encoding mechanism, the device performs nonlinear feature extraction and classification directly from raw analog signals, enabling an analog computing architecture that requires no time-frequency transformation. This architecture achieves 99.8% accuracy in speech recognition without digital preprocessing and 100% accuracy in astronaut visual object recognition. Furthermore, an all-hardware integrated drone vision system demonstrates real-time in situ command execution and autonomous navigation, delivering a terahertz-level response frequency and an ultra-low energy consumption of approximately 0.2 fJ per operation. This work expands the functional scope of antiferromagnetic devices beyond memory and logic, establishing them as a promising materials platform for energy-efficient physical computing and autonomous intelligence in extreme environments.

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