Open access
Aug 2026
Revealing the Nanoindentation-Induced Plastic Deformation Mechanisms of 4H-SiC: Combined Insights from Molecular Dynamics Simulations and Experiments
4H-SiC substrate is widely employed in semiconductor device fabrication owing to its unique crystal structure and excellent physicochemical properties. However, its deformation behavior during substrate processing remains complex and not fully understood. In this study, molecular dynamics (MD) simulations were performe...
Wuqing Lin, Hongyang Li, Zhongwei Hu et al.
· Materials · 0 citations