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Yun-Wen Chen

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Open access Aug 2026

Guiding Orthorhombic Phase Evolution in Ultrathin (<4 nm) Hf0.5Zr0.5O2 on Germanium.

The integration of scalable, high-performance Hf0.5Zr0.5O2 (HZO) ferroelectric materials with high-mobility channels such as germanium is critical for next-generation logic and memory devices. However, maintaining robust ferroelectricity in films thinner than 5 nm remains a major challenge. In this study, we systematic...

Jer-Fu Wang, Shu-Jui Chang, Yu-Tsung Liao et al. · 0 citations

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