Atomistic insights into the growth kinetics and surface chemistry of InGaAs in metalorganic chemical vapor deposition
The metalorganic chemical vapor deposition (MOCVD) preparation of InGaAs is the mainstream approach for commercial production, but the atomic-scale microkinetic mechanisms of its growth process remain to be thoroughly elucidated. The existing atomic-level simulations of the complete InGaAs MOCVD growth process are rela...