Author

Yu-Che Huang

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Open access Aug 2026

Guiding Orthorhombic Phase Evolution in Ultrathin (<4 nm) Hf0.5Zr0.5O2 on Germanium.

The integration of scalable, high-performance Hf0.5Zr0.5O2 (HZO) ferroelectric materials with high-mobility channels such as germanium is critical for next-generation logic and memory devices. However, maintaining robust ferroelectricity in films thinner than 5 nm remains a major challenge. In this study, we systematic...

Jer-Fu Wang, Shu-Jui Chang, Yu-Tsung Liao et al. · ACS Applied Materials and In... · 0 citations

Open access Sep 2026

Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors

Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...

Po-Heng Pao, Yi-Hsien Lin, Jia-Hao Chih et al. · ACS Applied Electronic Mater... · 0 citations