Thermal-Budget-Decoupled Integration of Freestanding Hafnium-Based Ferroelectric Dielectrics for van der Waals Memory Transistors.
Ferroelectric memories have emerged as promising candidates for nonvolatile memory and neuromorphic computing owing to their capability for direct channel modulation through polarization switching. However, the high thermal budget required for synthesis and post-annealing processes hampers scalable integration and degr...