Ultrafast Laser Micro/Nano Processing of GaN for Next‐Generation Microelectromechanical Systems (MEMS) Applications
Gallium nitride (GaN) has established itself as a wide‐bandgap semiconductor, driving advances in radio‐frequency devices, solid‐state lighting, and high‐power electronics. Its chemical stability, strong piezoelectric properties, and biocompatibility have turned GaN into a crucial candidate for next‐generation microe...