Yan-Nan Xu

Comprehensive Variation Model of Hafnium-Based Ferroelectric Capacitors for High-Sigma Memory Window Simulation

The polycrystalline nature of emerging ferroelectric materials introduces inherent variability in switching behavior, which poses a fundamental challenge for future high-density memory arrays. Predicting and mitigating this variability, particularly the worst-case “tail bits,” is critical for performance yet difficult...