Thermodynamic and kinetic engineering of bi-doped InSe for ultrafast, broadband, and highly stable optoelectronics
Two-dimensional (2D) indium selenide (InSe) holds great promise for optoelectronic applications, yet its practical application remains severely limited by high contact resistance, narrow spectral absorption range, and pronounced susceptibility to environmental degradation. Here, a bismuth (Bi) doping strategy is studie...