Xiao-Qing Pan

Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy

Cubic boron arsenide (c-BAs) is a promising ultrahigh thermal conductivity semiconductor, but its direct synthesis on lattice-mismatched substrates remains challenging. Here, we demonstrate the synthesis of nanocrystalline c-BAs thin films on GaAs(100) substrates using gas source molecular beam epitaxy. X-ray photoelec...