Array-Level Integration of MoS2-Hf0.5Zr0.5O2 Ferroelectric Memristors for in-Memory Image Preprocessing in Neural Networks.
In-memory computing using floating-gate memristor (FGMEM) arrays with 2D channels enables large-scale parallelism, low energy consumption, efficient hardware-level matrix-vector multiplications. However, tunneling-based FGMEM faces high operating voltage, slow programming, low on/off ratio, and a small memory window. H...