A High-Linearity Hybrid-Domain SRAM-CIM Macro With Wide-Margin Voltage-to-Time Interface and Process-Adaptive TDC
SRAM-based computing-in-memory (SRAM-CIM) alleviates the memory-wall bottleneck of the von Neumann architecture, enabling energy-efficient AI edge computing. Current-domain CIM schemes suffer from degraded linearity at low supply voltages, whereas time-domain CIM schemes are highly sensitive to process, voltage, and te...