As NA 0.33 EUV lithography operates increasingly close to fundamental resolution limits, accurate and robust optical proximity correction (OPC) models become critical for advanced logic technology development. In early technology phases, OPC calibration is challenged by limited availability of real product layouts. To...
As advanced techniques in Optical Proximity Correction (OPC), such as curvilinear OPC and inverse lithography technology, gain traction in production flows, the accuracy and robustness of compact OPC models become increasingly critical for advanced technology nodes. Traditional mask modeling approaches typically infer...
W. Gillijns, Ren-Yang Meng, B. Baskaran et al.· Photomask Japan· 1 citation
We present a physics-informed neural operator (PINO) trained with pseudo-spectral frequency-domain (PSFD) equations for electromagnetic (EM) scattering problems in EUV lithography. The Fourier neural operator is factorized into a two-dimensional lateral ($xy$) branch and a one-dimensional axial ($z$) branch and is trai...
Doyun Kim, W. Gillijns· arXiv.org· 0 citations
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