Here, we report wafer-scale 2H-MoTe2/perovskite quantum dot phototransistors that exhibit light-modulated ambipolar charge transport. CsPbBr3 quantum dots are monolithically integrated with 2H-MoTe2 films grown by cold-wall chemical vapor deposition, enabling uniform device fabrication over entire 2-in. wafer. Under 40...
Fermi level pinning (FLP) fundamentally limits contact engineering in two-dimensional semiconductors, yet its intrinsic origin remains obscured by the presence of interfacial disorder and defect-induced gap states. Although theoretical models attribute FLP to metal-induced gap states (MIGSs) and interface dipoles, dire...
Guan-Hao Chen, Cheng-Rong Hsing, Li-Syuan Lu et al.· Nano letters (Print)· 0 citations
Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...