Oct 2026
Comprehensive Variation Model of Hafnium-Based Ferroelectric Capacitors for High-Sigma Memory Window Simulation
The polycrystalline nature of emerging ferroelectric materials introduces inherent variability in switching behavior, which poses a fundamental challenge for future high-density memory arrays. Predicting and mitigating this variability, particularly the worst-case “tail bits,” is critical for performance yet difficult...
Di-Qing Su, Yan-Nan Xu, Qing-Ting Ding et al.
· IEEE Electron Device Letters · 0 citations