Seunghyun Oh

Harnessing Selective Defect Formation for Filament Control in Reliable and Energy‐Efficient Perovskite Resistive Random Access Memory

Halide perovskite memristors are emerging as compelling platforms for in‐memory computing because their low ionic migration energies and compositional versatility enable tunable conductance states. However, previous studies have primarily focused on defect passivation to improve device reliability, with limited exp...