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Sang-Heon Park

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Open access Oct 2026

Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching

Three-dimensional (3D) integrated one-selector one-resistor (1S1R) cross-point arrays are emerging as a leading next-generation memory technology. Achieving both nonvolatile memory switching and volatile threshold switching within a single material system offers tremendous potential for simplifying fabrication. This st...

Young-Min Kim, Sang-Heon Park, Jih-Ye Lee et al. · 0 citations

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