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Review Oct 2026

Ultrafast Laser Micro/Nano Processing of GaN for Next‐Generation Microelectromechanical Systems (MEMS) Applications

Gallium nitride (GaN) has established itself as a wide‐bandgap semiconductor, driving advances in radio‐frequency devices, solid‐state lighting, and high‐power electronics. Its chemical stability, strong piezoelectric properties, and biocompatibility have turned GaN into a crucial candidate for next‐generation microe...

Rizwana Bibi, Yang Li, Muhammad Farhan et al. · 0 citations

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