Temperature Dependence of Elemental Depth Profiles at the Au/Si Interface Using Confocal Micro X‐Ray Fluorescence Analysis
ABSTRACT This study aims to establish a method for nondestructively evaluating the elemental diffusion behavior at metal/semiconductor interfaces in situ, which is extremely important for reliability assessment of next‐generation semiconductor devices. Confocal micro X‐ray fluorescence spectrometry (CMXRF) was employed...