Open access
Oct 2026
Phonon-limited electron mobility in polar semiconductors from first principles: the role of the effective mass
We present a comprehensive ab initio investigation of phonon-limited electron transport in the high-mobility polar semiconductors GaAs, InAs, and InSb. Our approach is based on the DFT+ U method, combined with an iterative solution of the linearized Boltzmann transport equation using the Wannier interpolation tec...
Mohammad Dehghani, Dominic Waldhoer, Angus Gentles et al.
· npj Computational Materials · 0 citations