A Monolithic GaN Half-Bridge With High-Speed Auto-Zero Comparator and Bidirectional Level Shifting
This paper presents a monolithically integrated GaN half-bridge with all auxiliary high-speed and high-voltage circuits required for resonant converter applications. It integrates two 650 V power transistors and slew rate limiting gate drivers with 7.2 ns delay, achieving a peak 65% <inline-formula><tex-math notation="...