Defect and Ion-Migration Regulation in MAPbI3 Memristors via ZIF-67 Modification toward Stable Resistive Switching and Neuromorphic Computing.
High-performance resistive random-access memory (RRAM) based on organic-inorganic hybrid perovskites remains limited by intrinsic vacancy defects and uncontrolled ion migration, which usually induce random conductive filaments (CFs) formation and poor device stability. Herein, a defect-engineering strategy is proposed...