Po-Heng Pao

Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors

Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...