Polarity‐Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor
ABSTRACT Metal halide perovskites (MHPs), owing to their mixed ionic‐electronic conductivity and defect‐tolerant lattice, have emerged as promising candidates for next‐generation memristors. Yet, the interplay of distinct resistive switching mechanisms remains poorly understood. Here, we provide direct experimental evi...