A Compact 6–18 GHz RF Limiter Using Schottky Barrier Diodes in GaAs pHEMT Process
This paper presents a compact, wideband radio frequency (RF) limiter designed and fabricated using conventional Schottky barrier diodes (SBDs) in the 0.1μm GaAs D-mode pHEMT process. The number of stages is selected through a parametric trade-off analysis across one- to seven-stage configurations, balancing large-signa...