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Author

Md. Ashraf Ali

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Open access Sep 2026

Hybrid density functional study of strain-engineered III–V semiconductors and monolayer InSe

Accurate prediction of strain-dependent semiconductor properties requires reliable exchange–correlation treatments and a unified understanding of bulk and two-dimensional materials. Here, we investigate strain-engineered bulk AlP, AlSb, and monolayer InSe under biaxial strains from −6% to +6% using the Perdew–Burke–Ern...

Md. Tanvir Ahmed, Maahi Sabah, Md Saiful Islam et al. · 0 citations

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