Author

Mario Lanza

2 papers indexed here

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Open access Sep 2026

Interfacial Gap Switching in MXene Ti3C2Tx MoS2 Memristors.

Resistive-switching devices are essential building blocks for advanced multifunctional integrated circuits (ICs), with four major switching mechanisms (ion migration, phase change, magnetization orientation, and ferroelectric polarization) having been extensively studied, each facing inherent limitations for practical...

Xiangming Xu, S. Pazos, De-Kang Zhu et al. · Advances in Materials · 0 citations

Open access Sep 2026

Deterministic Switching-Path Engineering of CMOS-Integrated 2D Memristors for Neuromorphic Computing.

Two-dimensional (2D) memristors are promising for low-power and high-speed neuromorphic hardware. However, their performance under circuit-level constraints remains limited because resistive switching relies on native defects, hindering precise control of filament formation. Here, we report 2D MoTe2 memristors that int...

Jihoon Yang, Sohui Yoon, Jae-Ho Im et al. · Small · 0 citations