Sep 2026
High-Mobility MoS2 Transistors Enabled by In2P3S9 Functional Dielectric Engineering and Interfacial Dipole Modulation
Interfacial disorder, threshold-voltage instability, and mobility degradation present critical roadblocks for two-dimensional (2D) electronics. Conventional deposited high-κ oxides often introduce damage and defect states, whereas standard van der Waals (vdW) dielectrics function primarily as passive encapsulation la...
Shuo Liu, Yong-Si Liu, Xin-Yun Zhou et al.
· Nano letters (Print) · 0 citations