Amorphous Erbium Oxide (Er2O3) Memristors with Highly Linear Weight Updates for Artificial Synapses
An analog memristor with multilevel conductance states is essential for scalable neuromorphic computing, but achieving linear and symmetric SET/RESET switching characteristics for well-defined conductance states remains a major challenge. Here, we report an amorphous erbium oxide (Er2O3)-based memristor that addresse...