Sep 2026
Thermally enhanced resistive switching in interface-engineered AgHfO3-x/Al2O3 memristors via trap depopulation for neuromorphic computing.
Thermal instability remains a fundamental bottleneck in oxide-based resistive random-access memory (RRAM), where elevated operating temperatures invariably increase the high-resistance-state (HRS) leakage current and collapse the ON/OFF switching window, severely limiting reliable deployment. Here, an Au/AgHfO3-x/Al2O3...
Swaraj Mukherjee, M. M. Ganaie, Ayan Chatterjee et al.
· Materials Horizons · 0 citations