Gallium nitride (GaN) has established itself as a wide‐bandgap semiconductor, driving advances in radio‐frequency devices, solid‐state lighting, and high‐power electronics. Its chemical stability, strong piezoelectric properties, and biocompatibility have turned GaN into a crucial candidate for next‐generation microe...
Rizwana Bibi, Yang Li, Muhammad Farhan et al.· Laser & Photonics Review...· 0 citations
Femtosecond laser processing provides a versatile route for high-precision material structuring, yet the dynamic modulation of nanoscale feature sizes remains constrained by the far-field diffraction limit and insufficient control over local energy deposition. To overcome these limitations, we report a nanofabrication...
Bo Chen, Xin Li, Yi-Bo Lu et al.· PhotoniX· 0 citations
High-entropy alloy nanostructures (HEA-NSs) hold promise in advanced catalysis and materials science, but lack a robust and universal synthetic strategy designed at an atomic level. Here, femtosecond lasers are used to prepare HEA-NSs, from single atoms to 100 nm nanoparticles, either free-standing or supported on a va...
Zi-Kang Su, Lan Jiang, Yi-Heng Dai et al.· Science Advances· 0 citations
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