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Sep 2026

Emergence of strong ferroelectricity in pristine HfO2 via interfacial elemental diffusion

HfO2-based ferroelectric thin films demonstrate exceptional potential for nonvolatile memory applications, owing to their outstanding stability and superior compatibility with conventional semiconductor fabrication processes. Nevertheless, pure HfO2 displays weak ferroelectricity at room temperature and atmospheric pre...

H. Ci, Jun-Bo Xu, Yang-Fei Gao et al. · 0 citations

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