Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching
Three-dimensional (3D) integrated one-selector one-resistor (1S1R) cross-point arrays are emerging as a leading next-generation memory technology. Achieving both nonvolatile memory switching and volatile threshold switching within a single material system offers tremendous potential for simplifying fabrication. This st...