MoS 2 Interface Engineering for Lead-Free RbGeI 3 Perovskite Photodetectors: SCAPS-1D and Machine Learning Optimization
Interface engineering represents an effective strategy for passivating interfacial defects and suppressing dark current in photodetectors. Numerical simulations of an ITO/TiO 2 /MoS 2 /RbGeI 3 /Cu 2 O/Au n-i-p heterojunction demonstrate the efficacy of a MoS 2 interlayer in enhancing device performance. Sys...