Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films With Exceptional Endurance Enabled by Oxygen‐Engineered Nanolaminates
Ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) has emerged as a promising candidate for next‐generation nanoscale electronics owing to its CMOS compatibility and scalability. However, while oxygen vacancies are essential for stabilizing the ferroelectric phase in HZO, they also introduce significant reliabil...