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Jehyeok Jung

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Open access Sep 2026

Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations

The rapid advancement of artificial intelligence (AI) necessitates high-performance computing architecture. While compute express link (CXL) technologies facilitate memory expansion, conventional dynamic random-access memory (DRAM) encounters fundamental limitations in power consumption and scalability. Consequently, 1...

Jehyeok Jung, Munhyeon Kim, Sihyun Kim · 0 citations

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